← Electronic ceramics
Material selection

Four grades. One of them survives your cycle.

Silicon nitride is not a better ceramic. It is the only one left standing at a specific crossing point: 800 V, thick copper, high current, and several thousand cycles between −40 and +175 °C. Here are the numbers, and the edges.

Talk about a grade What we do to the blank

The grades are fixed by standard.

China's GB/T 45767-2025 divides silicon nitride substrate into four grades. The numbering is not marketing — it is a specification you can hold a supplier to.

GradeThermal conductivityBending strengthWhere it is specified
SN60≥ 60 W/(m·K)≥ 650 MPaStrongest of the four. Selected when the part is structural as much as thermal
SN80≥ 80 W/(m·K)HighThe common middle grade for power modules
SN100≥ 100 W/(m·K)HighHigher heat flux, smaller die area
SN120≥ 120 W/(m·K)≥ 550 MPaBest heat path, weakest of the four
Read the last column twice. As conductivity goes up, strength comes down — SN60 is 650 MPa, SN120 is 550 MPa. Conductivity needs low oxygen and large β grains; strength needs fine grains and strong boundaries. The two targets pull the process in opposite directions, so no supplier can give you both ends of the table. If a customer asks for "the highest conductivity and the highest strength", they are asking for a material that does not exist, and the useful reply is to ask which failure they are actually trying to avoid.

The only chart that matters in a selection meeting.

Plot the two numbers that decide survival: how well it moves heat, and how hard it is to crack. Most grades win one axis and lose the other.

Thermal conductivity versus fracture toughness Alumina sits at low conductivity and moderate toughness, aluminium nitride at high conductivity and low toughness, beryllia at highest conductivity and lowest toughness, and silicon nitride alone in the upper middle with conductivity around 85 and toughness around 7. 0 100 200 300 Thermal conductivity, W/(m·K) 0 2 4 6 8 Fracture toughness, MPa·m¹ᐟ² Al₂O₃ 96% 20–30 · 3.5–4.0 AlN 170–220 · 2.5–3.5 BeO 250–300 · 2.0–3.0 · toxic dust Si₃N₄ 70–100 · 6–8 the only one top-centre

Beryllia and aluminium nitride move more heat. Alumina is cheaper and easier to get. Only silicon nitride sits high on both axes at once — and toughness, not conductivity, is what decides whether a substrate survives a power cycle without cracking.

The arithmetic that lets it replace aluminium nitride.

Silicon nitride conducts roughly half as much heat per millimetre. It also runs at half the thickness.

One-dimensional thermal resistance:

R = t / (k × A)
ConfigurationThicknesskR, 10×10 mm die
Si₃N₄0.32 mm85 W/(m·K)0.038 °C/W
AlN0.635 mm180 W/(m·K)0.035 °C/W

Half the thickness, almost the same thermal resistance. That is why 0.32 mm became the standard silicon nitride substrate thickness, and why 0.20 mm ultra-thin grades exist.

But thin has a price. The thinner the plate, the harder warp is to hold, and the lower the bending section modulus. A 0.20 mm substrate that warps out of spec performs worse than a 0.32 mm one in tolerance. This is the trade nobody mentions when they quote the thickness.

The comparison, in one table.

Same rows, four materials. This is the table a selection meeting should be arguing over.

PropertySi₃N₄AlNAl₂O₃ 96%BeO
Thermal conductivity70–100 (up to 120–130)170–22020–30250–300
Bending strength600–900 MPa300–400 MPa300–380 MPa200–250 MPa
Fracture toughness6–8 MPa·m1/22.5–3.53.5–4.02–3
CTE, 10⁻⁶/K2.7–3.24.5–5.37–87–8
Thermal shockGood, ΔT 600–900 °CModeratePoorModerate
Cycles at −40/+250 °C> 3,000500–1,500200–500—
Max copper thickness, AMB800–1,200 µm600–800 µm——
ToxicityNoneNoneNoneSevere, as dust
CostHighMedium-highLowVery high

Published comparisons put the gap in plainer terms: in −45 to 150 °C cycling, silicon nitride AMB lasts an order of magnitude longer than aluminium nitride and two orders longer than alumina. If your program is 800 V and the module has to live through field thermal cycling, the material question is already answered — what is left is who can hold the tolerance.

Eight boundaries. All of them real.

This section exists because a supplier who only lists advantages has not made the part yet.

BoundaryNumberWhat it costs you
Conducts less than AlN40–50% of AlNOnly recovered by thinning, which makes warp harder
Conductivity and strength trade offSN60 650 MPa → SN120 550 MPaYou must choose; there is no top-of-both grade
Large plates are limited138 × 90 mm is the largest public domestic sizeHigh-power modules need panelisation, which adds interfaces
Warp is hard to hold≤ 0.2–0.4% typical specWarp drives die-attach pressure uniformity and bond-line thickness
Thin plates chip at holesSmall holes in thin substrateHole layout is constrained; laser parameters are the know-how
Long lead time, high costOverseas up to 24 weeks; domestic as low as 2Cost sits in powder, sintering, diamond grinding and AMB yield, multiplied
Hydrofluoric acid attacks it100% HF, strong attackSemiconductor wet processes must avoid fluoride media
It is a flat plateNot a 3D shapeDifferentiation is only tolerance, copper thickness, pattern accuracy and yield
Two numbers we do not repeat. A figure of "300 W/(m·K) for silicon nitride" circulates in industry articles; it contradicts every manufacturer datasheet (70–100, up to 130) and the standard itself, and it is wrong. Retail listings at "1.11 RMB per piece" for copper-bonded substrate are placeholder prices from traders, not a cost. Both are excluded here on purpose.

Tell us which failure you are designing against.

Thermal cycling, warp, dielectric strength or cost. The answer changes the grade, the thickness and the grinding sequence — and it is a shorter conversation than sending drawings first.

Get a quote